Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
Identifieur interne : 002265 ( France/Analysis ); précédent : 002264; suivant : 002266Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
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Abstract
Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov-De Haas oscillations were observed indicating the two-dimensional character of electron transport. A mobility of 20 000 cm2/V s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm-2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine-scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical transport quantum effects in the In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterostructure on silicon</title><author><name sortKey="Georgakilas, A" uniqKey="Georgakilas A">A. Georgakilas</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland, CALCE Electronic Packaging Research Center, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland, CALCE Electronic Packaging Research Center, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Christou, A" uniqKey="Christou A">A. Christou</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland, CALCE Electronic Packaging Research Center, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland, CALCE Electronic Packaging Research Center, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Zekentes, K" uniqKey="Zekentes K">K. Zekentes</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Foundation for Research and Technology-Hellas (FORTH), IESL, MRG, P. O. Box 1527, 711 10 Heraklion-Crete, Greece</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Grèce</country><wicri:regionArea>Foundation for Research and Technology-Hellas (FORTH), IESL, MRG, P. O. Box 1527, 711 10 Heraklion-Crete</wicri:regionArea><wicri:noRegion>711 10 Heraklion-Crete</wicri:noRegion></affiliation></author><author><name sortKey="Mercy, J M" uniqKey="Mercy J">J. M. Mercy</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>University of Montpellier, CC074, Place E. Bataillon, 34095 Montpellier, France</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>University of Montpellier, CC074, Place E. Bataillon, 34095 Montpellier</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Konczewicz, L K" uniqKey="Konczewicz L">L. K. Konczewicz</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>University of Montpellier, CC074, Place E. Bataillon, 34095 Montpellier, France</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>University of Montpellier, CC074, Place E. Bataillon, 34095 Montpellier</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Vila, A" uniqKey="Vila A">A. Vila</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Universitat de Barcelona, Departamento Fisica Applicada i Electronica, LCMM, 645 Diagonal Avenida, 08028 Barcelona, Spain</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Espagne</country><wicri:regionArea>Universitat de Barcelona, Departamento Fisica Applicada i Electronica, LCMM, 645 Diagonal Avenida, 08028 Barcelona</wicri:regionArea><placeName><region nuts="2" type="communauté">Catalogne</region></placeName></affiliation></author><author><name sortKey="Cornet, A" uniqKey="Cornet A">A. Cornet</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Universitat de Barcelona, Departamento Fisica Applicada i Electronica, LCMM, 645 Diagonal Avenida, 08028 Barcelona, Spain</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Espagne</country><wicri:regionArea>Universitat de Barcelona, Departamento Fisica Applicada i Electronica, LCMM, 645 Diagonal Avenida, 08028 Barcelona</wicri:regionArea><placeName><region nuts="2" type="communauté">Catalogne</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">94-0482304</idno><date when="1994-08-01">1994-08-01</date><idno type="stanalyst">PASCAL 94-0482304 AIP</idno><idno type="RBID">Pascal:94-0482304</idno><idno type="wicri:Area/Main/Corpus">01E512</idno><idno type="wicri:Area/Main/Repository">01D582</idno><idno type="wicri:Area/France/Extraction">002265</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. Appl. Phys.</title><title level="j" type="main">Journal of Applied Physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Electron mobility</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heterostructures</term><term>Indium arsenides</term><term>Modulation</term><term>Molecular beam epitaxy</term><term>Quantum Hall effect</term><term>Shubnikov-de Haas effect</term><term>TEM</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>7340H</term><term>6865</term><term>7361E</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Aluminium arséniure</term><term>Composé ternaire</term><term>Hétérostructure</term><term>Effet Hall quantique</term><term>Effet Shubnikov de Haas</term><term>Epitaxie jet moléculaire</term><term>Mobilité électron</term><term>MET</term><term>Modulation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electrical transport in a modulation doped heterostructure of In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov-De Haas oscillations were observed indicating the two-dimensional character of electron transport. A mobility of 20 000 cm<sup>2</sup>/V s was measured at 6 K for an electron sheet concentration of 1.7×10<sup>12</sup> cm<sup>-2</sup>. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine-scale composition modulation present in the In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As may further limit transport properties.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. Appl. 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A mobility of 20 000 cm<sup>2</sup>/V s was measured at 6 K for an electron sheet concentration of 1.7×10<sup>12</sup> cm<sup>-2</sup>. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. 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